?2008 fairchild semiconductor corporation 1 www.fairchildsemi.com FDH45N50F_f133 rev. c0 FDH45N50F_f133 n-channel unifet tm frfet ? mosfet april 2013 fdh45n50 f_f133 n-channel unifet tm frfet ? mosfet 500 v, 45 a, 120 m? features ?r ds(on) = 120 m? (max.) @ v gs = 10 v, i d = 22.5 a ? low gate charge (typ. 105 nc) ?low c rss (typ. 62 pf) ? 100% avalanche tested ? improved dv/dt capability applications ? lighting ? uninterruptible power supply ? ac-dc power supply description unifet tm mosfet is fairchild semiconductor ? ?s high voltage mosfet family based on planar stripe and dmos technology. this mosfet is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. the body diode?s reverse recovery perfor - mance of unifet frfet ? mosfet has been enhanced by lifetime control. its t rr is less than 100nsec and the reverse dv/dt immunity is 15v/ns while norm al planar mosfets have over 200nsec and 4.5v/nsec respectively. therefore, it can remove additional component and improve sy stem reliability in certain applications in which the performance of mosfet?s body diode is significant. this de vice family is suitable for switching power converter applications such as power factor correction (pfc), flat panel display (fpd) tv power, atx and electronic lamp bal - lasts d g s g d s to-247 absolute maximum ratings symbol parameter FDH45N50F_f133 unit v dss drain-source voltage 500 v i d drain current - continuous (t c = 25 ? c) - continuous (t c = 100 ? c) 45 28.4 a a i dm drain current - pulsed (note 1) 180 a v gss gate-source voltage ?30 v e as single pulsed avalanche energy (note 2) 1868 mj i ar avalanche current (note 1) 45 a e ar repetitive avalanche energy (note 1) 62.5 mj dv/dt peak diode recovery dv/dt (note 3) 50 v/ns p d power dissipation (t c = 25 ? c) - derate above 25 ? c 625 5 w w/ ? c t j, t stg operating and storage temperature range -55 to +150 ? c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 ? c thermal characteristics symbol parameter FDH45N50F_f133 unit r ? jc thermal resistance, junction-to-case, max. 0.2 ? c/ w r ? ja thermal resistance, junction-to-ambient, max. 40
FDH45N50F_f133 n-channel unifet tm frfet ? mosfet ?2008 fairchild semiconductor corporation 2 www.fairchildsemi.com FDH45N50F_f133 rev. c0 package marking and ordering information device marking device package reel size tape width quantity FDH45N50F FDH45N50F_f133 to-247 - - 30 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min. typ. max unit off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 ? a 500 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 ? a, referenced to 25 ? c -- 0.5 -- v/ ? c i dss zero gate voltage drain current v ds = 500v, v gs = 0v v ds = 400v, t c = 125 ? c -- -- -- -- 25 250 ? a ? a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 ? a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 22.5a -- 0.105 0.12 ? g fs forward transconductance v ds = 40v, i d = 22.5a -- 49.0 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 5100 6630 pf c oss output capacitance -- 790 1030 pf c rss reverse transfer capacitance -- 62 -- pf c oss output capacitance v ds = 400v, v gs = 0v, f = 1.0mhz -- 161 -- pf c oss eff. effective output capacitance v ds = 0v to 400v, v gs = 0v -- 342 -- pf switching characteristics t d(on) turn-on delay time v dd = 250v, i d = 48a r g = 25 ? (note 4) -- 140 290 ns t r turn-on rise time -- 500 1010 ns t d(off) turn-off delay time -- 215 440 ns t f turn-off fall time -- 245 500 ns q g total gate charge v ds = 400v, i d = 48a v gs = 10v (note 4) -- 105 137 nc q gs gate-source charge -- 33 -- nc q gd gate-drain charge -- 45 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 45 a i sm maximum pulsed drain-source diode forward current -- -- 180 a v sd drain-source diode forward voltage v gs = 0v, i s = 45a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 45a di f /dt =100a/ ? s -- 188 -- ns q rr reverse recovery charge -- 0.64 -- ? c notes: 1. repetitive rating: pulse width limit e d by maximum junction temperature 2. l = 1.46mh, i as = 48a, v dd = 50v, r g = 25 ? , starting t j = 25 ?c 3. i sd ? 45a, di/dt ? 200a/ ? s, v dd ? bv dss , starting t j = 125 ?c 4. essentially independent of operating temperature typical characteristics
FDH45N50F_f133 n-channel unifet tm frfet ? mosfet ?2008 fairchild semiconductor corporation 3 www.fairchildsemi.com FDH45N50F_f133 rev. c0 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 2 4 6 8 10 12 10 0 10 1 10 2 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariati on vs. s ource current and temperatue 0 20 40 60 80 100 120 140 160 0.00 0.05 0.10 0.15 0.20 0.25 0.30 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 0 10 1 10 2 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] figure 5. capacitance characteristics figure 6. gate charge characteristics 0 2 04 06 08 01 0 01 2 0 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v note : i d = 48a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 2000 4000 6000 8000 10000 12000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v]
FDH45N50F_f133 n-channel unifet tm frfet ? mosfet ?2008 fairchild semiconductor corporation 4 www.fairchildsemi.com FDH45N50F_f133 rev. c0 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 ? a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = 10 v 2. i d = 22.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 50 i d , drain current [a] t c , case temperature [ o c] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 ? s dc 10 ms 100 ? s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 11. typical drain current slope figure 12. typical drain-source voltage vs. gate resistance slope vs. gate resistance 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 notes : 1. v ds = 400 v 2. v gs = 12 v 3. i d = 25a 4. t j = 125 o c? dv/dt(off) dv/dt(on) dv/dt [v/ns] r g , gate resistance [ ? ] 0 5 10 15 20 25 30 35 40 45 50 0 500 1,000 1,500 2,000 2,500 3,000 3,500 4,000 notes : 1. v ds = 400 v 2. v gs = 12 v 3. i d = 25a 4. t j = 125 o c di/dt(off) di/dt(on) di/dt [a/ ? s] r g , gate resistance [ ? ]
FDH45N50F_f133 n-channel unifet tm frfet ? mosfet ?2008 fairchild semiconductor corporation 5 www.fairchildsemi.com FDH45N50F_f133 rev. c0 typical performance characteristics (continued) figure 13. typical switching losses vs. figure 14. unclamped inductive switching ? gate resistance capability 0 5 10 15 20 25 30 35 40 45 50 0 200 400 600 800 1,000 notes : 1. v ds = 400 v 2. v gs = 12 v 3. i d = 25a 4. t j = 125 o c? eoff eon energy [ ? j] r g , gate resistance [ ? ] 0.01 0.1 1 10 100 1 10 100 starting t j = 150 o c notes : 1. if r = 0 ? t av = (l)(i as )/(1.3 rated bv dss - v dd ) 2. if r ? 0 ? t av = (l/r)in[(i as x r)/(1.3 rated bv dss - v dd )+1] starting t j = 25 o c i as , avalanche current [a] t av , time in avalanche [ms] figure 15. transient thermal resistance curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -3 10 -2 10 -1 notes : 1. z ? jc (t) = 0.2 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ? jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ? jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2
FDH45N50F_f133 n-channel unifet tm frfet ? mosfet ?2008 fairchild semiconductor corporation 6 www.fairchildsemi.com FDH45N50F_f133 rev. c0 mechanical dimensions to-247a03 dimensions in millimeters
FDH45N50F_f133 n-channel unifet tm frfet ? mosfet ?2008 fairchild semiconductor corporation 7 www.fairchildsemi.com FDH45N50F_f133 rev. c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * p serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information for mative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-c ounterfeiting policy. fairchild?s anti-count erfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manuf actures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadv ertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of producti on and manufacturing delays. fairchild is taki ng strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. product s customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchil d will not provide any warranty coverage or other assistance for pa rts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i64 tm ?
|
